WSD100N06GDN56 N-alaala 60V 100A DFN5X6-8 WINSOK MOSFET

oloa

WSD100N06GDN56 N-alaala 60V 100A DFN5X6-8 WINSOK MOSFET

fa'amatalaga puupuu:

Numera Vaega:WSD100N06GDN56

BVDSS:60V

ID:100A

RDSON:3mΩ 

Auala:N-auala

afifi:DFN5X6-8


Fa'amatalaga Oloa

Fa'atatauga

Faailoga o oloa

WINSOK MOSFET vaaiga lautele o oloa

Ole voltage ole WSD100N06GDN56 MOSFET ole 60V, ole taimi nei ole 100A, ole tetee ole 3mΩ, ole auala ole N-channel, ma le afifi ole DFN5X6-8.

WINSOK MOSFET nofoaga fa'aoga

Sapalai malosi faʻafomaʻi MOSFET, PDs MOSFET, drones MOSFET, sikaleti eletise MOSFET, masini tetele MOSFET, ma meafaigaluega eletise MOSFET.

WINSOK MOSFET e fetaui ma isi numera o meafaitino

AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor MOSFET PDC692X.

MOSFET tapula'a

Faailoga

Parameter

Fa'ailoga

Iunite

VDS

Alavai-Mata'ele

60

V

VGS

Faitotoa-Mata'i Malosi

±20

V

ID1,6

Fa'a'ave'au Fa'aauau TC=25°C

100

A

TC=100°C

65

IDM2

Fa'amama Fa'aa'ai TC=25°C

240

A

PD

Malosi maualuga Fa'amama'i TC=25°C

83

W

TC=100°C

50

IAS

Avalanche Current, Tusa'i fatu

45

A

EAS3

Malosiaga Avalanche Pulse Tasi

101

mJ

TJ

Mata'utia Fa'asagaga Vevela

150

TSTG

Teuga o le vevela

-55 i le 150

RθJA1

Feso'ota'iga Tete'e vevela i le ambient

Tulaga Tumau

55

/W

RθJC1

Tete'e vevela-Feso'ota'iga i le pusa

Tulaga Tumau

1.5

/W

 

Faailoga

Parameter

Tulaga

Min.

Ituaiga.

Max.

Vaega

Static        

V(BR)DSS

Alavai-Apo'a malepe Voltage

VGS = 0V, ID = 250μA

60    

V

IDSS

Ole Vaitotoa ole Faitotoa ole Vaitoto

VDS = 48 V, VGS = 0V

   

1

µA

 

TJ=85°C

   

30

IGSS

Faitoto'a Lisi A'e

VGS = ±20V, VDS = 0V

    ±100

nA

I uiga        

VGS(TH)

Faitotoa Faitotoa Voltage

VGS = VDS, IDS = 250µA

1.2

1.8

2.5

V

RDS(i)2

Alavai-Source On-state Resistance

VGS = 10V, ID = 20A

 

3.0

3.6

VGS = 4.5V, ID = 15A

 

4.4

5.4

Suiga        

Qg

Aofa'i Totogi Faitotoa

VDS=30V

VGS=10V

ID=20A

  58  

nC

Qgs

Gate-Sour Charge   16  

nC

Qgd

Totogi Faitotoa-Talivai  

4.0

 

nC

td (i)

Taimi tuai e ki ai

VGEN=10V

VDD=30V

ID=20A

RG=Ω

  18  

ns

tr

Taimi Fa'aola  

8

 

ns

td(off)

Taimi Faatuai-Tape   50  

ns

tf

Tape Taimi Pau   11  

ns

Rg

Gat tetee

VGS=0V, VDS=0V, f=1MHz

 

0.7

 

Ω

Malosi        

Ciss

I le Capacitance

VGS=0V

VDS=30V f=1MHz

 

3458

 

pF

Coss

Fa'asao i fafo   1522  

pF

Crss

Fa'aliliuga Fa'aliliuga Capacitancy   22  

pF

Alavai-Source Diode Uiga ma Fa'ailoga Maualuga        

IS1,5

Punavai Fa'aauau i le taimi nei

VG=VD=0V , Malosi i le taimi nei

   

55

A

ISM

Pulsed Source Current3     240

A

VSD2

Diode Malosi i Luma

ISD = 1A , VGS=0V

 

0.8

1.3

V

trr

Toe Fa'afo'i Taimi

ISD=20A, dlSD/dt=100A/µs

  27  

ns

Qrr

Totogi Toe Fa'afo'isia   33  

nC


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