WSD3023DN56 N-Ch ma P-Alaala 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET
Fa'amatalaga Lautele
O le WSD3023DN56 o le N-ch ma le P-ch MOSFET pito sili ona maualuga faʻatasi ma le maualuga maualuga o le cell density, lea e maua ai le RDSON sili ona lelei ma le totogi o le faitotoa mo le tele o faʻaoga faʻaliliuga tutusa. Le WSD3023DN56 fa'amalieina le RoHS ma Green Product mana'omia 100% EAS fa'amaonia ma le fa'atuatuaina atoatoa o galuega fa'amaonia.
Vaega
Advanced cell density Trench technology ,Super Low Gate Charge , Lelei le CdV/dt effect decline ,100% EAS Guaranteed , Green Device Avanoa.
Talosaga
Talosaga Maualuluga Point-of-Load Synchronous Buck Converter mo MB / NB / UMPC / VGA, Fesoʻotaʻiga DC-DC Power System , CCFL Back-light Inverter, Drones, motors, taʻavale eletise, mea tetele.
numera meafaitino tutusa
PANJIT PJQ5606
Fa'ailoga taua
Faailoga | Parameter | Fa'ailoga | Iunite | |
N-Ch | P-Ch | |||
VDS | Alavai-Mata'ele | 30 | -30 | V |
VGS | Faitotoa-Mata'i Malosi | ±20 | ±20 | V |
ID | Fa'aauau Fa'avai le taimi nei, VGS(NP)=10V,Ta=25℃ | 14* | -12 | A |
Fa'aauau Fa'avai le taimi nei, VGS(NP)=10V,Ta=70℃ | 7.6 | -9.7 | A | |
IDP a | Fa'ata'ita'i Fa'asolo Fa'asolo, VGS(NP)=10V | 48 | -48 | A |
EAS c | Malosiaga Avalanche, Pusa e tasi, L=0.5mH | 20 | 20 | mJ |
IAS c | Avalanche i le taimi nei, paso tasi, L=0.5mH | 9 | -9 | A |
PD | Aofa'i Malosi'i, Ta=25℃ | 5.25 | 5.25 | W |
TSTG | Teuga o le vevela | -55 i le 175 | -55 i le 175 | ℃ |
TJ | Fa'agaoioi Junction Temperature Range | 175 | 175 | ℃ |
RqJA b | Tete'e vevela-Fesoasoani i Ambient, Tulaga Tumau | 60 | 60 | ℃/W |
RqJC | Tete'e vevela-Feso'ota'iga i mataupu, Tulaga Tumau | 6.25 | 6.25 | ℃/W |
Faailoga | Parameter | Tulaga | Min. | Ituaiga. | Max. | Vaega |
BVDSS | Alavai-Apo'a malepe Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
RDS(ON)d | Static Drain-Source On-Resistance | VGS=10V , ID=8A | --- | 14 | 18.5 | mΩ |
VGS=4.5V , ID=5A | --- | 17 | 25 | |||
VGS(th) | Faitotoa Faitotoa Voltage | VGS=VDS , ID =250uA | 1.3 | 1.8 | 2.3 | V |
IDSS | Alavai-Source Leakage taimi nei | VDS=20V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=20V , VGS=0V , TJ=85℃ | --- | --- | 30 | |||
IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
Rg | Faitotoa Tetee | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | 3.4 | Ω |
Qge | Aofa'i Totogi Faitotoa | VDS=15V, VGS=4.5V, IDS=8A | --- | 5.2 | --- | nC |
Qgse | Gate-Source Totogi | --- | 1.0 | --- | ||
Qgde | Totogi Faitotoa-Talivai | --- | 2.8 | --- | ||
Td(i)e | Taimi Fa'atuai-Ki | VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R. | --- | 6 | --- | ns |
Tre | Taimi Tulai | --- | 8.6 | --- | ||
Td(off)e | Taimi Faatuai-Tape | --- | 16 | --- | ||
Tfe | Taimi Pau | --- | 3.6 | --- | ||
Cisse | Malosiaga Fa'aofi | VDS=15V , VGS=0V , f=1MHz | --- | 545 | --- | pF |
Cosse | Gaioiina o Galuega | --- | 95 | --- | ||
Crsse | Fa'aliliuga Fa'aliliuga Capacitancy | --- | 55 | --- |