WSD40120DN56 N-alaala 40V 120A DFN5X6-8 WINSOK MOSFET

oloa

WSD40120DN56 N-alaala 40V 120A DFN5X6-8 WINSOK MOSFET

fa'amatalaga puupuu:

Numera Vaega:WSD40120DN56

BVDSS:40V

ID:120A

RDSON:1.85mΩ 

Auala:N-auala

afifi:DFN5X6-8


Fa'amatalaga Oloa

Fa'atatauga

Faailoga o oloa

WINSOK MOSFET vaaiga lautele o oloa

Ole voltage ole WSD40120DN56 MOSFET ole 40V, ole taimi nei ole 120A, ole tetee ole 1.85mΩ, ole auala ole N-channel, ma le afifi ole DFN5X6-8.

WINSOK MOSFET nofoaga fa'aoga

MOSFET e-sikaleti, MOSFET e fa'aogaina uaealesi, MOSFET drones, MOSFET tausiga fa'afoma'i, MOSFET ta'avale ta'avale, MOSFET fa'atonu, MOSFET oloa fa'akomepiuta, MOSFET mea fa'aoga laiti, MOSFET fa'aeletonika fa'atau.

WINSOK MOSFET e fetaui ma isi numera o meafaitino

AOS MOSFET AON6234,AON6232,AON623.Onsemi,FAIRCHILD MOSFET NVMFS5C442NL.VISHAY MOSFET SiRA52ADP,SiJA52ADP.STMicroelectronics MOSFET STL12N4LF6AG.NXP MOSFET PHSH484SFRETTO PH484SPANE MOSFET PHSH484SPAN. 4.NIKO-SEM MOSFET PKCSBB.POTENS Semiconductor MOSFET PDC496X.

MOSFET tapula'a

Faailoga

Parameter

Fa'ailoga

Iunite

VDS

Alavai-Mata'ele

40

V

VGS

Faitotoa-Source Galulue

±20

V

ID@TC=25

Fa'a'au Fa'a'au Fa'aauau, VGS@10V1,7

120

A

ID@TC=100

Fa'a'au Fa'a'au Fa'aauau, VGS@10V1,7

100

A

IDM

Fa'amama Fa'aa'ai2

400

A

EAS

Malosiaga Avalanche Pulse Tasi3

240

mJ

IAS

Avalanche Current

31

A

PD@TC=25

Aofa'i Malosi'i4

104

W

TSTG

Teuga o le vevela

-55 i le 150

TJ

Fa'agaoioi Junction Temperature Range

-55 i le 150

 

Faailoga

Parameter

Tulaga

Min.

Ituaiga.

Max.

Vaega

BVDSS

Alavai-Apo'a malepe Voltage VGS=0V , ID=250uA

40

---

---

V

BVDSS/△TJ

BVDSSTemperature Coefficient Fa'asino i le 25, ID=1mA

---

0.043

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V , ID=30A

---

1.85

2.4

mΩ

RDS(ON)

Static Drain-Source On-Resistance2 VGS=4.5V , ID=20A

---

2.5

3.3

VGS(th)

Faitotoa Faitotoa Voltage VGS=VDS, ID=250uA

1.5

1.8

2.5

V

VGS(th)

VGS(th)Temperature Coefficient

---

-6.94

---

mV/

IDSS

Alavai-Source Leakage taimi nei VDS=32V , VGS=0V , TJ=25

---

---

2

uA

VDS=32V , VGS=0V , TJ=55

---

---

10

IGSS

Gate-Source Leakage Current VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Fa'asagaga i luma VDS=5V, ID=20A

---

55

---

S

Rg

Faitotoa Tetee VDS=0V , VGS=0V , f=1MHz

---

1.1

2

Ω

Qg

Aofa'iga o le Faitotoa (10V) VDS=20V , VGS=10V , ID=10A

---

76

91

nC

Qgs

Gate-Source Totogi

---

12

14.4

Qgd

Totogi Faitotoa-Talivai

---

15.5

18.6

Td(i)

Taimi Fa'atuai-Ki VDD=30V , VGEN=10V , RG=1Ω, ID=1A ,RL=15Ω.

---

20

24

ns

Tr

Taimi Tulai

---

10

12

Td(off)

Taimi Faatuai-Tape

---

58

69

Tf

Taimi Pau

---

34

40

Cua

Malosiaga Fa'aofi VDS=20V , VGS=0V , f=1MHz

---

4350

---

pF

Coss

Fa'aulufale Gaioiina

---

690

---

Crss

Fa'aliliuga Fa'aliliuga Capacitancy

---

370

---


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