WSD45N10GDN56 N-alaala 100V 45A DFN5X6-8 WINSOK MOSFET

oloa

WSD45N10GDN56 N-alaala 100V 45A DFN5X6-8 WINSOK MOSFET

fa'amatalaga puupuu:

Numera Vaega:WSD45N10GDN56

BVDSS:100V

ID:45A

RDSON:14.5mΩ

Auala:N-auala

afifi:DFN5X6-8


Fa'amatalaga Oloa

Fa'atatauga

Faailoga o oloa

WINSOK MOSFET vaaiga lautele o oloa

Ole voltage ole WSD45N10GDN56 MOSFET ole 100V, ole taimi nei ole 45A, ole tetee ole 14.5mΩ, ole auala ole N-channel, ma le afifi ole DFN5X6-8.

WINSOK MOSFET nofoaga fa'aoga

E-sikareti MOSFET, MOSFET e fa'aogaina le leai o se mea, MOSFET afi, MOSFET drones, MOSFET tausiga fa'afoma'i, MOSFET fa'atau ta'avale, MOSFET fa'atonu, oloa fa'akomepiuta MOSFET, MOSFET mea fa'aoga laiti, MOSFET fa'aeletonika fa'atau.

WINSOK MOSFET e fetaui ma isi numera o meafaitino

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semiconductor MOSFET PDC966X.

MOSFET tapula'a

Faailoga

Parameter

Fa'ailoga

Iunite

VDS

Alavai-Mata'ele

100

V

VGS

Faitotoa-Source Galulue

±20

V

ID@TC=25

Fa'a'au Fa'a'au Fa'aauau, VGS@10V

45

A

ID@TC=100

Fa'a'au Fa'a'au Fa'aauau, VGS@10V

33

A

ID@TA=25

Fa'a'au Fa'a'au Fa'aauau, VGS@10V

12

A

ID@TA=70

Fa'a'au Fa'a'au Fa'aauau, VGS@10V

9.6

A

IDMa

Fa'amama Fa'aa'ai

130

A

EASb

Malosiaga Avalanche Pulse Tasi

169

mJ

IASb

Avalanche Current

26

A

PD@TC=25

Aofa'i Malosi'i

95

W

PD@TA=25

Aofa'i Malosi'i

5.0

W

TSTG

Teuga o le vevela

-55 i le 150

TJ

Fa'agaoioi Junction Temperature Range

-55 i le 150

 

Faailoga

Parameter

Tulaga

Min.

Ituaiga.

Max.

Vaega

BVDSS

Alavai-Apo'a malepe Voltage VGS=0V , ID=250uA

100

---

---

V

BVDSS/△TJ

BVDSS Temperature Coefficient Fa'asino i le 25, ID=1mA

---

0.0

---

V/

RDS(ON)d

Static Drain-Source On-Resistance2 VGS=10V , ID=26A

---

14.5

17.5

mΩ

VGS(th)

Faitotoa Faitotoa Voltage VGS=VDS, ID=250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Temperature Coefficient

---

-5   mV/

IDSS

Alavai-Source Leakage taimi nei VDS=80V , VGS=0V , TJ=25

---

- 1

uA

VDS=80V , VGS=0V , TJ=55

---

- 30

IGSS

Gate-Source Leakage Current VGS=±20V, VDS=0V

---

- ±100

nA

Rge

Faitotoa Tetee VDS=0V , VGS=0V , f=1MHz

---

1.0

---

Ω

Qge

Aofa'iga o le Faitotoa (10V) VDS=50V , VGS=10V , ID=26A

---

42

59

nC

Qgse

Gate-Source Totogi

---

12

--

Qgde

Totogi Faitotoa-Talivai

---

12

---

Td(i)e

Taimi Fa'atuai-Ki VDD=30V , VGEN=10V , RG=6Ω

ID=1A ,RL=30Ω

---

19

35

ns

Tre

Taimi Tulai

---

9

17

Td(off)e

Taimi Faatuai-Tape

---

36

65

Tfe

Taimi Pau

---

22

40

Cisse

Malosiaga Fa'aofi VDS=30V , VGS=0V , f=1MHz

---

1800

---

pF

Cosse

Gaioiina o Galuega

---

215

---

Crsse

Fa'aliliuga Fa'aliliuga Capacitancy

---

42

---


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