WSD6040DN56 N-alaala 60V 36A DFN5X6-8 WINSOK MOSFET

oloa

WSD6040DN56 N-alaala 60V 36A DFN5X6-8 WINSOK MOSFET

fa'amatalaga puupuu:

Numera Vaega:WSD6040DN56

BVDSS:60V

ID:36A

RDSON:14mΩ 

Auala:N-auala

afifi:DFN5X6-8


Fa'amatalaga Oloa

Fa'atatauga

Faailoga o oloa

WINSOK MOSFET vaaiga lautele o oloa

Ole voltage ole WSD6040DN56 MOSFET ole 60V, ole taimi nei ole 36A, ole tetee ole 14mΩ, ole auala ole N-channel, ma le afifi ole DFN5X6-8.

WINSOK MOSFET nofoaga fa'aoga

E-sikareti MOSFET, MOSFET e fa'aogaina le leai o se mea, MOSFET afi, MOSFET drones, MOSFET tausiga fa'afoma'i, MOSFET ta'avale ta'avale, MOSFET fa'atonu, oloa fa'akomepiuta MOSFET, MOSFET mea fa'aoga laiti, MOSFET fa'aeletonika fa'atau.

WINSOK MOSFET e fetaui ma isi numera o meafaitino

AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.

MOSFET tapula'a

Faailoga

Parameter

Fa'ailoga

Iunite

VDS

Alavai-Mata'ele

60

V

VGS

Faitotoa-Mata'i Malosi

±20

V

ID

Fa'a'ave'au Fa'aauau TC=25°C

36

A

TC=100°C

22

ID

Fa'a'ave'au Fa'aauau TA=25°C

8.4

A

TA=100°C

6.8

IDMa

Fa'amama Fa'aa'ai TC=25°C

140

A

PD

Malosi maualuga Fa'amama'i TC=25°C

37.8

W

TC=100°C

15.1

PD

Malosi maualuga Fa'amama'i TA=25°C

2.08

W

TA=70°C

1.33

IAS c

Avalanche Current, Tusa'i fatu

L=0.5mH

16

A

EASc

Malosiaga Avalanche Pulse Tasi

L=0.5mH

64

mJ

IS

Diode fa'aauau pea i luma

TC=25°C

18

A

TJ

Mata'utia Fa'asagaga Vevela

150

TSTG

Teuga o le vevela

-55 i le 150

RθJAb

Fa'asagaga Fa'asao ile fa'asao

Tulaga Tumau

60

/W

RθJC

Tete'e vevela-Feso'ota'iga i le pusa

Tulaga Tumau

3.3

/W

 

Faailoga

Parameter

Tulaga

Min.

Ituaiga.

Max.

Vaega

Static        

V(BR)DSS

Alavai-Apo'a malepe Voltage

VGS = 0V, ID = 250μA

60    

V

IDSS

Ole Vaitotoa ole Faitotoa ole Vaitoto

VDS = 48 V, VGS = 0V

   

1

µA

 

TJ=85°C

   

30

IGSS

Faitotoa Li'i A'e

VGS = ±20V, VDS = 0V

    ±100

nA

I uiga        

VGS(TH)

Faitotoa Faitotoa Voltage

VGS = VDS, IDS = 250µA

1

1.6

2.5

V

RDS(i)d

Alavai-Source On-state Resistance

VGS = 10V, ID = 25A

  14 17.5

VGS = 4.5V, ID = 20A

  19

22

Suiga        

Qg

Totogi Aofa'i Faitotoa

VDS=30V

VGS=10V

ID=25A

  42  

nC

Qgs

Gate-Sour Charge  

6.4

 

nC

Qgd

Totogi Faitotoa-Talivai  

9.6

 

nC

td (i)

Taimi Fa'atuai Fa'aola

VGEN=10V

VDD=30V

ID=1A

RG=6Ω

RL=30Ω

  17  

ns

tr

Taimi Tulai  

9

 

ns

td(off)

Taimi Faatuai-Tape   58  

ns

tf

Tapē Taimi Pau   14  

ns

Rg

Gat tetee

VGS=0V, VDS=0V, f=1MHz

 

1.5

 

Ω

Malosi        

Ciss

I le Capacitance

VGS=0V

VDS=30V f=1MHz

 

2100

 

pF

Coss

Fa'asao i fafo   140  

pF

Crss

Fa'aliliuga Fa'aliliuga Capacitancy   100  

pF

Alavai-Source Diode uiga ma Fa'ailoga Maualuga        

IS

Punavai Fa'aauau i le taimi nei

VG=VD=0V , Malosi i le taimi nei

   

18

A

ISM

Pulsed Source Current3    

35

A

VSDd

Diode Malosi i Luma

ISD = 20A , VGS=0V

 

0.8

1.3

V

trr

Toe Fa'afo'i Taimi

ISD=25A, dlSD/dt=100A/µs

  27  

ns

Qrr

Totogi Toe Fa'afo'isia   33  

nC


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