WSD6070DN56 N-alaala 60V 80A DFN5X6-8 WINSOK MOSFET

oloa

WSD6070DN56 N-alaala 60V 80A DFN5X6-8 WINSOK MOSFET

fa'amatalaga puupuu:

Numera Vaega:WSD6070DN56

BVDSS:60V

ID:80A

RDSON:7.3mΩ 

Auala:N-auala

afifi:DFN5X6-8


Fa'amatalaga Oloa

Fa'atatauga

Faailoga o oloa

WINSOK MOSFET vaaiga lautele o oloa

Ole voltage ole WSD6070DN56 MOSFET ole 60V, ole taimi nei ole 80A, ole tetee ole 7.3mΩ, ole auala ole N-channel, ma le afifi ole DFN5X6-8.

WINSOK MOSFET nofoaga fa'aoga

E-sikareti MOSFET, MOSFET e fa'aogaina le leai o se mea, MOSFET afi, MOSFET drones, MOSFET tausiga fa'afoma'i, MOSFET ta'avale ta'avale, MOSFET fa'atonu, oloa fa'akomepiuta MOSFET, MOSFET mea fa'aoga laiti, MOSFET fa'aeletonika fa'atau.

WINSOK MOSFET e fetaui ma isi numera o meafaitino

POTENS Semiconductor MOSFET PDC696X.

MOSFET tapula'a

Faailoga

Parameter

Fa'ailoga

Iunite

VDS

Alavai-Mata'ele

60

V

VGS

Faitotoa-Source Galulue

±20

V

TJ

Mata'utia Fa'asagaga Vevela

150

°C

ID

Teuga o le vevela

-55 i le 150

°C

IS

Diode fa'aauau pea i luma,TC=25°C

80

A

ID

Fa'a'au Fa'a'au Fa'aauau, VGS=10V,TC=25°C

80

A

Fa'a'au Fa'a'au Fa'aauau, VGS=10V,TC=100°C

66

A

IDM

Fa'amama Fa'aa'au A'o ,TC=25°C

300

A

PD

Malosi maualuga Fa'amama'i,TC=25°C

150

W

Malosi maualuga Fa'amama'i,TC=100°C

75

W

RθJA

Tete'e vevela-Fesoasoani i le Ambient ,t =10s ̀

50

°C/W

Thermal Resistance-Junction to Ambient, Tulaga Tumau

62.5

°C/W

RqJC

Tete'e vevela-Feso'ota'iga i le pusa

1

°C/W

IAS

Avalanche i le taimi nei, paso tasi, L=0.5mH

30

A

EAS

Malosiaga Avalanche, Pusa Tasi,L=0.5mH

225

mJ

 

Faailoga

Parameter

Tulaga

Min.

Ituaiga.

Max.

Vaega

BVDSS

Alavai-Apo'a malepe Voltage VGS=0V , ID=250uA

60

---

---

V

BVDSS/△TJ

BVDSSTemperature Coefficient Fa'asino i le 25, ID=1mA

---

0.043

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V , ID=40A

---

7.0

9.0

mΩ

VGS(th)

Faitotoa Faitotoa Voltage VGS=VDS, ID=250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Temperature Coefficient

---

-6.94

---

mV/

IDSS

Alavai-Source Leakage taimi nei VDS=48V , VGS=0V , TJ=25

---

---

2

uA

VDS=48V , VGS=0V , TJ=55

---

---

10

IGSS

Gate-Source Leakage Current VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Fa'asagaga i luma VDS=5V, ID=20A

---

50

---

S

Rg

Faitotoa Tetee VDS=0V , VGS=0V , f=1MHz

---

1.0

---

Ω

Qg

Aofa'iga o le Faitotoa (10V) VDS=30V , VGS=10V , ID=40A

---

48

---

nC

Qgs

Gate-Source Totogi

---

17

---

Qgd

Totogi Faitotoa-Talivai

---

12

---

Td(i)

Taimi Fa'atuai-Ki VDD=30V , VGEN=10V , RG=1Ω, ID=1A ,RL=15Ω.

---

16

---

ns

Tr

Taimi Tulai

---

10

---

Td(off)

Taimi Faatuai-Tape

---

40

---

Tf

Taimi Pau

---

35

---

Cua

Malosiaga Fa'aofi VDS=30V , VGS=0V , f=1MHz

---

2680

---

pF

Coss

Fa'aulufale Gaioiina

---

386

---

Crss

Fa'aliliuga Fa'aliliuga Capacitancy

---

160

---


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