WSM340N10G N-alaala 100V 340A TOLL-8L WINSOK MOSFET

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WSM340N10G N-alaala 100V 340A TOLL-8L WINSOK MOSFET

fa'amatalaga puupuu:


  • Numera Fa'ata'ita'i:WSM340N10G
  • BVDSS:100V
  • RDSON:1.6mΩ
  • ID:340A
  • Auala:N-auala
  • afifi:TOLL-8L
  • Oloa Summery:Ole voltage ole WSM340N10G MOSFET ole 100V, ole taimi nei ole 340A, ole tetee ole 1.6mΩ, ole auala ole N-channel, ma le afifi ole TOLL-8L.
  • Talosaga:Meafaigaluega faʻafomaʻi, drones, sapalai eletise PD, sapalai eletise LED, mea tau alamanuia, ma isi.
  • Fa'amatalaga Oloa

    Fa'atatauga

    Faailoga o oloa

    Fa'amatalaga Lautele

    O le WSM340N10G o le N-Ch MOSFET pito sili ona maualuga ma le maualuga o le cell density, lea e maua ai le RDSON sili ona lelei ma le totogi o le faitotoa mo le tele o talosaga fa'aliliu fa'atasi. O le WSM340N10G e faʻamalieina le RoHS ma Green Product manaʻomia, 100% EAS faʻamaonia ma faʻamaonia atoatoa galuega faʻamaonia.

    Vaega

    Advanced cell density Trench technology , Super Low Gate Charge , Excellent CdV/dt effect decline , 100% EAS Guaranteed , Green Device Avanoa.

    Talosaga

    Fa'asa'o fa'atasi , DC / DC Fa'aliliuga , Su'e uta , Meafaigaluega fa'afoma'i, drones, PD mana sapalai, sapalai eletise LED, mea tau alamanuia, ma isi.

    Fa'ailoga taua

    Fa'atonu aupito maualuga

    Faailoga Parameter Fa'ailoga Iunite
    VDS Alavai-Mata'ele 100 V
    VGS Faitotoa-Mata'i Malosi ±20 V
    ID@TC=25℃ Fa'asolo Fa'avai le taimi, VGS @ 10V 340 A
    ID@TC=100℃ Fa'asolo Fa'avai le taimi, VGS @ 10V 230 A
    IDM Fa'amama Fa'avai..TC=25°C 1150 A
    EAS Malosiaga Avalanche, Pusa Tasi,L=0.5mH 1800 mJ
    IAS Avalanche i le taimi nei, paso tasi, L=0.5mH 120 A
    PD@TC=25℃ Aofa'i Malosi'i 375 W
    PD@TC=100℃ Aofa'i Malosi'i 187 W
    TSTG Teuga o le vevela -55 i le 175
    TJ Fa'agaoioi Junction Temperature Range 175

    Tulaga Fa'aeletise (TJ=25℃, se'i vagana ua fa'ailoaina)

    Faailoga Parameter Tulaga Min. Ituaiga. Max. Vaega
    BVDSS Alavai-Apo'a malepe Voltage VGS=0V , ID=250uA 100 --- --- V
    △BVDSS/△TJ BVDSS Temperature Coefficient Fa'asino ile 25℃, ID=1mA --- 0.096 --- V/℃
    RDS(ON) Static Drain-Source On-Resistance VGS=10V,ID=50A --- 1.6 2.3
    VGS(th) Faitotoa Faitotoa Voltage VGS=VDS , ID =250uA 2.0 3.0 4.0 V
    △VGS(th) VGS(th) Temperature Coefficient --- -5.5 --- mV/℃
    IDSS Alavai-Source Leakage taimi nei VDS=85V , VGS=0V , TJ=25℃ --- --- 1 uA
    VDS=85V , VGS=0V , TJ=55℃ --- --- 10
    IGSS Gate-Source Leakage Current VGS=±25V , VDS=0V --- --- ±100 nA
    Rg Faitotoa Tetee VDS=0V , VGS=0V , f=1MHz --- 1.0 --- Ω
    Qg Aofa'iga o le Faitotoa (10V) VDS=50V , VGS=10V , ID=50A --- 260 --- nC
    Qgs Gate-Source Totogi --- 80 ---
    Qgd Totogi Faitotoa-Talivai --- 60 ---
    Td(i) Taimi Fa'atuai-Ki VDD=50V , VGS=10V ,RG=1Ω,RL=1Ω,IDS=1A. --- 88 --- ns
    Tr Taimi Tulai --- 50 ---
    Td(off) Taimi Faatuai-Tape --- 228 ---
    Tf Taimi Pau --- 322 ---
    Ciss Malosiaga Fa'aofi VDS=40V , VGS=0V , f=1MHz --- 13900 --- pF
    Coss Gaioiina o Galuega --- 6160 ---
    Crss Fa'aliliuga Fa'aliliuga Capacitancy --- 220 ---

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