WSR200N08 N-alaala 80V 200A TO-220-3L WINSOK MOSFET
Fa'amatalaga Lautele
O le WSR200N08 o le N-Ch MOSFET pito sili ona maualuga ma le maualuga o le cell density, lea e maua ai le RDSON sili ona lelei ma le totogi o le faitotoa mo le tele o talosaga fa'aliliu fa'atasi. O le WSR200N08 faʻafeiloaʻi le RoHS ma Green Product manaʻomia, 100% EAS faʻamaonia ma faʻamaonia atoatoa galuega faʻamaonia.
Vaega
Fa'atekonolosi fa'atekonolosi maualuga le maualuga o le cell density, Super Low Gate Charge, Fa'aitiitia le a'afiaga o le CdV/dt, 100% EAS Fa'amautinoa, Maua Mea Matagofie.
Talosaga
Suiga talosaga, Pulea Malosiaga mo Faiga Inverter, Sikaleti faaeletonika, uaealesi totogi, afi, BMS, faʻalavelave faʻafuaseʻi sapalai, drones, fomaʻi, taʻavale taʻavale, taʻavale, lomitusi 3D, oloa numera, meafale laiti, mea faʻatau eletise, ma isi.
numera meafaitino tutusa
AO AOT480L, I FDP032N08B, ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, ma isi.
Fa'ailoga taua
Tulaga Fa'aeletise (TJ=25℃, se'i vagana ua fa'ailoaina)
Faailoga | Parameter | Fa'ailoga | Iunite |
VDS | Alavai-Mata'ele | 80 | V |
VGS | Faitotoa-Mata'i Malosi | ±25 | V |
ID@TC=25℃ | Fa'a'au'au Fa'aauau, VGS @ 10V1 | 200 | A |
ID@TC=100℃ | Fa'a'au'au Fa'aauau, VGS @ 10V1 | 144 | A |
IDM | Fa'amama Fa'aa'e2,TC=25°C | 790 | A |
EAS | Malosiaga Avalanche, Pusa Tasi,L=0.5mH | 1496 | mJ |
IAS | Avalanche i le taimi nei, paso tasi, L=0.5mH | 200 | A |
PD@TC=25℃ | Aofa'i Malosi'i Tele4 | 345 | W |
PD@TC=100℃ | Aofa'i Malosi'i Tele4 | 173 | W |
TSTG | Teuga o le vevela | -55 i le 175 | ℃ |
TJ | Fa'agaoioi Junction Temperature Range | 175 | ℃ |
Faailoga | Parameter | Tulaga | Min. | Ituaiga. | Max. | Vaega |
BVDSS | Alavai-Apo'a malepe Voltage | VGS=0V , ID=250uA | 80 | --- | --- | V |
△BVDSS/△TJ | BVDSS Temperature Coefficient | Fa'asino ile 25℃, ID=1mA | --- | 0.096 | --- | V/℃ |
RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V,ID=100A | --- | 2.9 | 3.5 | mΩ |
VGS(th) | Faitotoa Faitotoa Voltage | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
△VGS(th) | VGS(th) Temperature Coefficient | --- | -5.5 | --- | mV/℃ | |
IDSS | Alavai-Source Leakage taimi nei | VDS=80V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=80V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
IGSS | Gate-Source Leakage Current | VGS=±25V , VDS=0V | --- | --- | ±100 | nA |
Rg | Faitotoa Tetee | VDS=0V , VGS=0V , f=1MHz | --- | 3.2 | --- | Ω |
Qg | Aofa'iga o le Faitotoa (10V) | VDS=80V , VGS=10V , ID=30A | --- | 197 | --- | nC |
Qgs | Gate-Source Totogi | --- | 31 | --- | ||
Qgd | Totogi Faitotoa-Talivai | --- | 75 | --- | ||
Td(i) | Taimi Fa'atuai-Ki | VDD=50V , VGS=10V ,RG=3Ω, ID=30A | --- | 28 | --- | ns |
Tr | Taimi Tulai | --- | 18 | --- | ||
Td(off) | Taimi Faatuai-Tape | --- | 42 | --- | ||
Tf | Taimi Pau | --- | 54 | --- | ||
Ciss | Malosiaga Fa'aofi | VDS=15V , VGS=0V , f=1MHz | --- | 8154 | --- | pF |
Coss | Gaioiina o Galuega | --- | 1029 | --- | ||
Crss | Fa'aliliuga Fa'aliliuga Capacitancy | --- | 650 | --- |