WST2078 N&P Alaala 20V/-20V 3.8A/-4.5A SOT-23-6L WINSOK MOSFET

fa'amatalaga puupuu:

Numera Fa'ata'ita'i:WST2078

BVDSS:20V/-20V

RDSON:45mΩ/65mΩ

ID:3.8A/-4.5A

Auala:N&P Channel

afifi:SOT-23-6L

Oloa Summery:O le WST2078 MOSFET o loʻo i ai fua faʻatatau o le 20V ma le -20V.E mafai ona fa'afoeina galu o le 3.8A ma le -4.5A, ma o lo'o i ai tulaga fa'atete'e o le 45mΩ ma le 65mΩ.O le MOSFET o lo'o iai uma le N&P Channel agava'a ma e sau ile SOT-23-6L afifi.

Talosaga:Sikaleti eletise, fa'atonu, oloa fa'atekinolosi, mea faigaluega, ma mea fa'aeletonika fa'atau.

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Fa'amatalaga Oloa

Fa'atatauga

Faailoga o oloa

Fa'amatalaga Lautele

O le WST2078 o le MOSFET sili ona lelei mo suiga laiti ma le utaina o talosaga.E i ai le maualuga o le cell density e maua ai le RDSON sili ona lelei ma le totogi o le faitotoa.E fetaui ma manaʻoga RoHS ma Green Product ma ua faʻamaonia mo le faʻamaoni atoatoa o galuega.

Vaega

Fa'atekonolosi fa'atekonolosi fa'atasi ai ma va'a maualuga o le cell density, matua maualalo le totogi o le faitoto'a, ma le fa'aitiitia lelei o a'afiaga Cdv/dt.O lenei masini e faauo foi i le siosiomaga.

Talosaga

Ole la'ititi ole la'ititi ole suiga ole la'ititi e fetaui lelei mo le fa'aoga ile MB/NB/UMPC/VGA, feso'ota'iga DC-DC eletise, suiga o uta, e-sikareti, fa'atonu, oloa fa'akomepiuta, meafale laiti, ma tagata fa'atau. faaeletonika.

numera meafaitino tutusa

AOS AO6604 AO6608,VISHAY Si3585CDV,PANJIT PJS6601.

Fa'ailoga taua

Faailoga	Parameter	Fa'ailoga		Iunite
Faailoga	Parameter	N-Alāvai	P-Alāvai	Iunite
VDS	Alavai-Mata'ele	20	-20	V
VGS	Faitotoa-Mata'i Malosi	±12	±12	V
ID@Tc=25℃	Fa'a'au'au Fa'aauau, VGS @ 4.5V1	3.8	-4.5	A
ID@Tc=70℃	Fa'a'au'au Fa'aauau, VGS @ 4.5V1	2.8	-2.6	A
IDM	Fa'amama Fa'aa'aua'i2	20	-13	A
PD@TA=25℃	Aofa'i Malosi'esea3	1.4	1.4	W
TSTG	Teuga o le vevela	-55 i le 150	-55 i le 150	℃
TJ	Fa'agaoioi Junction Temperature Range	-55 i le 150	-55 i le 150	℃

Faailoga	Parameter	Tulaga	Min.	Ituaiga.	Max.	Vaega
BVDSS	Alavai-Apo'a malepe Voltage	VGS=0V , ID=250uA	20	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Fa'asino ile 25℃, ID=1mA	---	0.024	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=3A	---	45	55	mΩ
		VGS=2.5V , ID=1A	---	60	80
		VGS=1.8V , ID=1A	---	85	120
VGS(th)	Faitotoa Faitotoa Voltage	VGS=VDS , ID =250uA	0.5	0.7	1	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-2.51	---	mV/℃
IDSS	Alavai-Source Leakage taimi nei	VDS=16V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Alavai-Source Leakage taimi nei	VDS=16V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	VGS=±8V , VDS=0V	---	---	±100	nA
gfs	Fa'asagaga i luma	VDS=5V , ID=1A	---	8	---	S
Rg	Faitotoa Tetee	VDS=0V , VGS=0V , f=1MHz	---	2.5	3.5	Ω
Qg	Totogi Aofa'i Faitotoa (4.5V)	VDS=10V , VGS=10V , ID=3A	---	7.8	---	nC
Qgs	Gate-Source Totogi		---	1.5	---
Qgd	Totogi Faitotoa-Talivai		---	2.1	---
Td(i)	Taimi Fa'atuai-Ki	VDD=10V , VGEN=4.5V , RG=6Ω ID=3A RL=10Ω	---	2.4	4.3	ns
Tr	Taimi Tulai		---	13	23
Td(off)	Taimi Faatuai-Tape		---	15	28
Tf	Taimi Pau		---	3	5.5
Ciss	Malosiaga Fa'aofi	VDS=10V , VGS=0V , f=1MHz	---	450	---	pF
Coss	Fa'aulufale Gaioiina		---	51	---
Crss	Fa'aliliuga Fa'aliliuga Capacitancy		---	52	---